SIRA04DP-T1-GE3 is a 30V 40A (D-S) N-channel synchronous rectification MOSFET, silk screen marked as RA04, often used in high power density DC/DC, VRM, embedded DC/DC, etc.

Product parameters:

Transistor Polarity: N-Channel

Number of channels: 1 channel

Vds - Destruction voltage between drain and source: 30V

Id - Continuous drain current: 40A

Rds On - Resistance between drain and source: 1.8mOhms

Vgs - Voltage between gate and source: -16V, +20V

Vgs th - threshold voltage between gate and source: 1.1V

Qg - Gate charge: 77nC

Working temperature: -55℃ to +150℃

Dp - Power Consumption: 62.5W