PMBT2369 Bipolar(BJT) NPN switching transistor in SOT23 plastic package, Used in high-speed switching of portable devices. Used to replace damaged PMBT2369 switching transistors on your device.

SMD Transistor Code: 1J, p1J(Made in Hong Kong), W1J(Made in China).

Specification:

Low current: maximum 200 mA

Low voltage: maximum 15 V

Max Collector Power Dissipation (Pc): 0.25 W

Max Collector-Base Voltage |Vcb|: 40 V

Max Collector-Emitter Voltage |Vce|: 15 V

Max Emitter-Base Voltage |Veb|: 5 V

Max Collector Current |Ic max|: 0.2 A

Operating ambient Temperature (Tamb): -65 to 150 °C

Transition Frequency (ft): 500 MHz

Forward Current Transfer Ratio (hFE), MIN: 40