The OSG65R069HS MOSFET utilizes charge balancing techniques to achieve low on-resistance and low gate charge. It is designed to minimize conduction losses and provide excellent switching performance and robust avalanche capability.
The OSG65R069HS is optimized for extreme switching performance to minimize switching losses. It is tailored for high power density applications to meet the highest efficiency standards.
Product parameters:
VDS, min @ Tj(max): 700V
ID, pulse: 159A
RDS(ON) , max @ VGS=10V: 69mΩ
Qg: 60.5nC
This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!