The OSG65R069HZ 53A 650V 390W 0.069Ω MOSFET utilizes charge balancing technology to achieve low on-resistance and gate charge. It is designed to minimize conduction losses and provide excellent switching performance and strong avalanche capability. It integrates a fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to achieve higher efficiency, higher reliability, and a smaller form factor.

OSG65R069HZ SOT-247 replacement N-Channel MOSFET for Power Supply Unit PSU.

Features：

① Low RDS(on) & FOM

② Extremely low switching loss

③ Excellent stability and uniformity

④ Ultra-fast and robust body diode

Product parameters:

Package：SOT-247

Type：MOSFET

FET Type：N-Channel

Operating Temperature：-55 to +125 C

Application：Power Supply