NTMFS4C022NT1G Single N-Channel MOSFET  The NTMFS4C022N MOS FET features low RDS(on) to minimize conduction losses, low QG, and capacitance to minimize driver losses. Available in SO−8FL 5*6 mm package.

pecification:

Drain to Source Voltage: 30V

Gate to Source Voltage: ±20V

Continuous Drain Current RJC: 136A

Power Dissipation RJC: 64W

Pulsed Drain Current: 900A

Operating Junction and Storage Temperature Range: −55 to 150°C

Source Current: 53A