The LND7N65 N channel power MOSFETs are fabricated using advanced planar VDMOS technology. The product features low on-resistance, superior switching performance, and high avalanche energy.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Product parameter：

V_DSS 650V

I_D 7A

R_DS(on),max 1.4Ω

Q_g,typ 20.7nC

Product features:

Low R_DS(on)

Low gate charge (typ. Q_g =20.7nC)

100% UIS tested

RoHS compliant