AO3423 is a P-Channel enhancement mode field effect transistor in Whatsminer H3 control board with AS** silkscreen marking. It uses advanced trench technology to provide excellent RDS(ON), low gate charge, and gate voltages as low as 2.5V. The device is suitable for use as a load switch or PWM applications.

Product parameter:

FET Type: P-Channel

Technology: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss): 20 V

Current - Continuous Drain (Id) @ 25°C: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V

Rds On (Max) @ Id, Vgs: 92mOhm @ 2A, 10V

Vgs(th) (Max) @ Id: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V

Vgs (Max): ±12V

Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V

Power Dissipation (Max): 1.4W (Ta)

Operating Temperature: -55°C ~ 150°C (TJ)